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| Ordering number : ENN7452 2SC5794 NPN Triple Diffused Planar Silicon Transistor 2SC5794 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features * * * * Package Dimensions unit : mm 2174A [2SC5794] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1600 800 5 25 50 3.0 100 150 --55 to +150 Unit V V V A A W W C C 5.45 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1600V, RBE=0 IC=10mA, RBE= VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit A mA V mA 3.5 0.8 2.1 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100374 No.7452-1/4 2SC5794 Continued from preceding page. Parameter DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time Symbol hFE1 hFE2 VCE(sat) VBE(sat) tstg tf VCE=5V, IC=1A VCE=5V, IC=18A IC=16A, IB=4A IC=16A, IB=4A IC=12A, IB1=2A, IB2=--6A IC=12A, IB1=2A, IB2=--6A Conditions Ratings min 10 4 7 3 1.5 3.0 0.2 V V s s typ max Unit Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=200V RB RL= 16.7 16 14 IC -- VCE 2.0A 1.8A 26 24 IC -- VBE VCE=5V 1.6A 22 Collector Current, IC -- A Collector Current, IC -- A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 1.4A 1.2A 1.0A 0.8A 20 18 16 14 12 10 8 6 4 2 0 0.6A 0.4A 0.2A 0.1A 20 C Ta= 1 0 0.2 0.4 0.6 25 C 0.8 IB=0 7 8 9 10 --40 1.0 C 1.2 IT03584 Collector-to-Emitter Voltage, VCE -- V 100 7 5 IT03583 10 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=5 Ta= -4 0C 25C DC Current Gain, hFE 3 2 Ta=120C 25C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 7 5 3 2 Ta= --40C 120C 25C 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 12 2 3 10 0C 5 --40C Collector Current, IC -- A IT03585 Collector Current, IC -- A IT03586 No.7452-2/4 2SC5794 10 7 SW Time -- IC Switching Time, SW Time -- s VCC=200V IC / IB1=6 IB2 / IB1=3 R load 10 7 5 3 2 SW Time -- IB2 VCC=200V IC=12A IB1=2A R load Switching Time, SW Time -- s 5 3 2 tstg ts tg 1.0 7 5 3 2 1.0 7 5 3 2 tf tf 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 100 7 5 3 2 IT03587 100 7 5 3 Forward Bias A S O ICP=50A IC=25A Reverse Bias A S O L=100H IB2= --5A Tc=25C Single pulse Base Current, IB2 -- A IT03588 s 0 s 10 0 30 Collector Current, IC -- A Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 P C =1 00 W 2 10 7 5 3 2 1.0 7 5 3 2 1m s 10m DC s op er ati on 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 4.0 3.5 5 7 1000 IT03589 0.1 100 2 3 5 7 1000 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 120 110 IT03590 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 100 120 140 160 100 90 80 70 60 50 40 30 20 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 No he at sin k 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03581 Case Temperature, Tc -- C IT03591 No.7452-3/4 2SC5794 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7452-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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